OSG60R096HSF Datasheet. Specs and Replacement

Type Designator: OSG60R096HSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 261 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34.7 nS

Cossⓘ - Output Capacitance: 280.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: TO247

OSG60R096HSF substitution

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OSG60R096HSF datasheet

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 5.1. Size:857K  oriental semi
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 5.2. Size:830K  oriental semi
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 5.3. Size:844K  oriental semi
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Detailed specifications: OSG60R074KSZF, OSG60R075HSZF, OSG60R092FF, OSG60R092HF, OSG60R092HSF, OSG60R092HT3ZF, OSG60R092PT3ZF, OSG60R096FSF, IRF640, OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, OSG60R099FT3F, OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F

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