OSG60R099HF Datasheet. Specs and Replacement

Type Designator: OSG60R099HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38.5 nS

Cossⓘ - Output Capacitance: 223.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247

OSG60R099HF substitution

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OSG60R099HF datasheet

 ..1. Size:410K  oriental semi
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OSG60R099HF

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 4.1. Size:945K  oriental semi
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OSG60R099HF

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 4.2. Size:409K  oriental semi
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OSG60R099HF

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

 4.3. Size:980K  oriental semi
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OSG60R099HF

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Detailed specifications: OSG60R092PT3ZF, OSG60R096FSF, OSG60R096HSF, OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, OSG60R099FT3F, OSG60R099HEZF, AO3400, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF, OSG60R108FZF

Keywords - OSG60R099HF MOSFET specs

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