OSG60R099HF Datasheet and Replacement
Type Designator: OSG60R099HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.5 nS
Cossⓘ - Output Capacitance: 223.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
OSG60R099HF substitution
OSG60R099HF Datasheet (PDF)
osg60r099hf.pdf

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r099hszf.pdf

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
Datasheet: OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , IRF3710 , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF .
History: AP9987GH-HF | FTK15N10D | SWP3205B | DAMH560N100 | STW77N65M5 | 7N65G-TQ2-R | ME2604-G
Keywords - OSG60R099HF MOSFET datasheet
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History: AP9987GH-HF | FTK15N10D | SWP3205B | DAMH560N100 | STW77N65M5 | 7N65G-TQ2-R | ME2604-G



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