OSG60R099HT3F Datasheet and Replacement
Type Designator: OSG60R099HT3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39.4 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
OSG60R099HT3F substitution
OSG60R099HT3F Datasheet (PDF)
osg60r099hszf.pdf
OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r099hf.pdf
OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , IRF3710 , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF .
History: UF830G-TA3-T | PSMN2R8-40PS | IRFI624G | SWMN7N65J | IRFI614A | PSMN2R7-30PL | STP3401A
Keywords - OSG60R099HT3F MOSFET datasheet
OSG60R099HT3F cross reference
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OSG60R099HT3F replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: UF830G-TA3-T | PSMN2R8-40PS | IRFI624G | SWMN7N65J | IRFI614A | PSMN2R7-30PL | STP3401A
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