OSG60R099JF Datasheet. Specs and Replacement

Type Designator: OSG60R099JF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38.5 nS

Cossⓘ - Output Capacitance: 223.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: PDFN8X8

OSG60R099JF substitution

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OSG60R099JF datasheet

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OSG60R099JF

OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, OSG60R099FT3F, OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, 10N60, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF, OSG60R108FZF, OSG60R108HSZF, OSG60R108HT3ZF, OSG60R108HZF

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.