OSG60R099JF Datasheet and Replacement
Type Designator: OSG60R099JF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.5 nS
Cossⓘ - Output Capacitance: 223.9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: PDFN8X8
OSG60R099JF substitution
OSG60R099JF Datasheet (PDF)
osg60r099jf.pdf

OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , IRFB4227 , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF .
History: OSG60R074FSZF | HTD200P03
Keywords - OSG60R099JF MOSFET datasheet
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History: OSG60R074FSZF | HTD200P03



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