OSG60R099JF
MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R099JF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 219
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 44.8
nC
trⓘ - Rise Time: 38.5
nS
Cossⓘ -
Output Capacitance: 223.9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099
Ohm
Package: PDFN8X8
OSG60R099JF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R099JF
Datasheet (PDF)
..1. Size:371K oriental semi
osg60r099jf.pdf 
OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
5.4. Size:330K oriental semi
osg60r099kszf.pdf
OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove
5.5. Size:409K oriental semi
osg60r099hszf.pdf
OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
5.7. Size:410K oriental semi
osg60r099hf.pdf
OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.
