OSG60R099KSZF Datasheet and Replacement
Type Designator: OSG60R099KSZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 203.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO263
OSG60R099KSZF substitution
OSG60R099KSZF Datasheet (PDF)
osg60r099kszf.pdf
OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove
Datasheet: OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , IRFB4115 , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF .
History: IPI90R500C3 | OSG60R035HF | MTDN7002ZHS6R | IPI65R600C6 | STL17N3LLH6 | STL15N3LLH5 | STL150N3LLH6
Keywords - OSG60R099KSZF MOSFET datasheet
OSG60R099KSZF cross reference
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OSG60R099KSZF substitution
OSG60R099KSZF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IPI90R500C3 | OSG60R035HF | MTDN7002ZHS6R | IPI65R600C6 | STL17N3LLH6 | STL15N3LLH5 | STL150N3LLH6
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