All MOSFET. OSG60R099KSZF Datasheet

 

OSG60R099KSZF Datasheet and Replacement


   Type Designator: OSG60R099KSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 203.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO263
 

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OSG60R099KSZF Datasheet (PDF)

 ..1. Size:330K  oriental semi
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OSG60R099KSZF

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove

 4.1. Size:902K  oriental semi
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OSG60R099KSZF

 4.2. Size:1007K  oriental semi
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OSG60R099KSZF

 5.1. Size:1006K  oriental semi
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OSG60R099KSZF

Datasheet: OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , IRFP250N , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF .

History: F3S90HVX2 | OSG60R099KEZF | NDP6051 | BL80N20L-W | AON6512 | FDS6688S | MPSD70M910B

Keywords - OSG60R099KSZF MOSFET datasheet

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