OSG60R099KT3F Datasheet and Replacement
Type Designator: OSG60R099KT3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39.4 nS
Cossⓘ - Output Capacitance: 131 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO263
OSG60R099KT3F substitution
OSG60R099KT3F Datasheet (PDF)
osg60r099kszf.pdf

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove
Datasheet: OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , IRF9540 , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF , OSG60R108KZF .
History: AM7001P | FQNL1N50BTA | AP3A010MT | IXTH450P2 | DMG1023UV | ME70N03S-G | HMS75N65T
Keywords - OSG60R099KT3F MOSFET datasheet
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OSG60R099KT3F replacement
History: AM7001P | FQNL1N50BTA | AP3A010MT | IXTH450P2 | DMG1023UV | ME70N03S-G | HMS75N65T



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