OSG60R099KT3F Datasheet. Specs and Replacement

Type Designator: OSG60R099KT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39.4 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO263

OSG60R099KT3F substitution

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OSG60R099KT3F datasheet

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OSG60R099KT3F

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 4.1. Size:330K  oriental semi
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OSG60R099KT3F

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove... See More ⇒

 4.2. Size:1007K  oriental semi
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OSG60R099KT3F

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 5.1. Size:1006K  oriental semi
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Detailed specifications: OSG60R099FT3F, OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, 2N7000, OSG60R099PEZF, OSG60R108FZF, OSG60R108HSZF, OSG60R108HT3ZF, OSG60R108HZF, OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF

Keywords - OSG60R099KT3F MOSFET specs

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