OSG60R099PEZF Datasheet. Specs and Replacement

Type Designator: OSG60R099PEZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 261 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.4 nS

Cossⓘ - Output Capacitance: 223.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO220

OSG60R099PEZF substitution

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OSG60R099PEZF datasheet

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OSG60R099PEZF

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OSG60R099PEZF

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove... See More ⇒

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Detailed specifications: OSG60R099HEZF, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, P55NF06, OSG60R108FZF, OSG60R108HSZF, OSG60R108HT3ZF, OSG60R108HZF, OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF

Keywords - OSG60R099PEZF MOSFET specs

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