All MOSFET. OSG60R099PEZF Datasheet

 

OSG60R099PEZF Datasheet and Replacement


   Type Designator: OSG60R099PEZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 261 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.4 nS
   Cossⓘ - Output Capacitance: 223.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220
 

 OSG60R099PEZF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG60R099PEZF Datasheet (PDF)

 ..1. Size:1006K  oriental semi
 osg60r099pezf.pdf pdf_icon

OSG60R099PEZF

 5.1. Size:945K  oriental semi
 osg60r099ht3f.pdf pdf_icon

OSG60R099PEZF

 5.2. Size:902K  oriental semi
 osg60r099kt3f.pdf pdf_icon

OSG60R099PEZF

 5.3. Size:330K  oriental semi
 osg60r099kszf.pdf pdf_icon

OSG60R099PEZF

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove

SHOW MORE

Datasheet: OSG60R099HEZF , OSG60R099HF , OSG60R099HSZF , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , IRFB4115 , OSG60R108FZF , OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF , OSG60R108KZF , OSG60R108PZF .

History: FIR18N20G | NIMD6001 | OSG65R080PT3ZF | HCP60R099 | OSG65R125PZF | IRFBG20 | IXFN48N50

Keywords - OSG60R099PEZF MOSFET datasheet

 OSG60R099PEZF cross reference
 OSG60R099PEZF equivalent finder
 OSG60R099PEZF lookup
 OSG60R099PEZF substitution
 OSG60R099PEZF replacement

 

 
Back to Top

 


 
.