OSG60R108HSZF Datasheet. Specs and Replacement

Type Designator: OSG60R108HSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63.1 nS

Cossⓘ - Output Capacitance: 226.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm

Package: TO247

OSG60R108HSZF substitution

- MOSFET ⓘ Cross-Reference Search

 

OSG60R108HSZF datasheet

 ..1. Size:880K  oriental semi
 osg60r108hszf.pdf pdf_icon

OSG60R108HSZF

... See More ⇒

 4.1. Size:958K  oriental semi
 osg60r108hzf.pdf pdf_icon

OSG60R108HSZF

... See More ⇒

 4.2. Size:917K  oriental semi
 osg60r108ht3zf.pdf pdf_icon

OSG60R108HSZF

... See More ⇒

 5.1. Size:937K  oriental semi
 osg60r108kzf.pdf pdf_icon

OSG60R108HSZF

... See More ⇒

SHOW MORE

Detailed specifications: OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF, OSG60R108FZF, 7N65, OSG60R108HT3ZF, OSG60R108HZF, OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF

Keywords - OSG60R108HSZF MOSFET specs

 OSG60R108HSZF cross reference

 OSG60R108HSZF equivalent finder

 OSG60R108HSZF pdf lookup

 OSG60R108HSZF substitution

 OSG60R108HSZF replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs