OSG60R108KSZF Datasheet. Specs and Replacement

Type Designator: OSG60R108KSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63.1 nS

Cossⓘ - Output Capacitance: 226.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm

Package: TO263

OSG60R108KSZF substitution

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OSG60R108KSZF datasheet

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Detailed specifications: OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF, OSG60R108FZF, OSG60R108HSZF, OSG60R108HT3ZF, OSG60R108HZF, OSG60R108JZF, AON7408, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF, OSG60R150HF, OSG60R150JF, OSG60R150KF, OSG60R150PF

Keywords - OSG60R108KSZF MOSFET specs

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