OSG60R108KSZF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R108KSZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56.7 nC
Rise Time (tr): 63.1 nS
Drain-Source Capacitance (Cd): 226.7 pF
Maximum Drain-Source On-State Resistance (Rds): 0.108 Ohm
Package: TO263
OSG60R108KSZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R108KSZF Datasheet (PDF)
5.5. Size:721K oriental semi
osg60r108fzf.pdf
osg60r108fzf.pdf
OSG60R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
