OSG60R150FF Datasheet. Specs and Replacement

Type Designator: OSG60R150FF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.2 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220F

OSG60R150FF substitution

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OSG60R150FF datasheet

 ..1. Size:1018K  oriental semi
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OSG60R150FF

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 5.1. Size:831K  oriental semi
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OSG60R150FF

OSG60R150KF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:970K  oriental semi
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OSG60R150FF

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 5.3. Size:983K  oriental semi
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Detailed specifications: OSG60R108HSZF, OSG60R108HT3ZF, OSG60R108HZF, OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, IRF9540N, OSG60R150HF, OSG60R150JF, OSG60R150KF, OSG60R150PF, OSG60R180DT3F, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF

Keywords - OSG60R150FF MOSFET specs

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