OSG60R150FF Datasheet and Replacement
Type Designator: OSG60R150FF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220F
OSG60R150FF substitution
OSG60R150FF Datasheet (PDF)
osg60r150kf.pdf
OSG60R150KF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R108HSZF , OSG60R108HT3ZF , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF , OSG60R108KZF , OSG60R108PZF , OSG60R140FSZF , IRF1010E , OSG60R150HF , OSG60R150JF , OSG60R150KF , OSG60R150PF , OSG60R180DT3F , OSG60R180FSF-NB , OSG60R180FT3F , OSG60R180HF .
History: AOB66620L | VMO650-01F | HGB057N15S | HGB080N10AL | SVG104R5NKL | FTK830F | 2SK1840
Keywords - OSG60R150FF MOSFET datasheet
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History: AOB66620L | VMO650-01F | HGB057N15S | HGB080N10AL | SVG104R5NKL | FTK830F | 2SK1840
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