OSG60R180DT3F Datasheet. Specs and Replacement

Type Designator: OSG60R180DT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 186 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO252

OSG60R180DT3F substitution

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OSG60R180DT3F datasheet

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Detailed specifications: OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF, OSG60R150HF, OSG60R150JF, OSG60R150KF, OSG60R150PF, IRFP260, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF, OSG60R180IF, OSG60R180KF, OSG60R180PF, OSG60R190DT3ZF, OSG60R190DTF

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