OSG60R180IF Datasheet and Replacement
Type Designator: OSG60R180IF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO262
OSG60R180IF substitution
OSG60R180IF Datasheet (PDF)
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60
Datasheet: OSG60R150HF , OSG60R150JF , OSG60R150KF , OSG60R150PF , OSG60R180DT3F , OSG60R180FSF-NB , OSG60R180FT3F , OSG60R180HF , IRFB3607 , OSG60R180KF , OSG60R180PF , OSG60R190DT3ZF , OSG60R190DTF , OSG60R190FSZF , OSG60R190FT3ZF , OSG60R1K2AF , OSG60R1K2DF .
History: SI1410EDH | 2SJ608 | STD55N4F5 | DAMH300N150 | NTLLD4901NF | AOB2606L | SL420NPD
Keywords - OSG60R180IF MOSFET datasheet
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History: SI1410EDH | 2SJ608 | STD55N4F5 | DAMH300N150 | NTLLD4901NF | AOB2606L | SL420NPD
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