OSG60R180KF Datasheet. Specs and Replacement

Type Designator: OSG60R180KF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.3 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO263

OSG60R180KF substitution

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OSG60R180KF datasheet

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OSG60R180KF

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 4.2. Size:1016K  oriental semi
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OSG60R180KF

OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60... See More ⇒

 5.1. Size:916K  oriental semi
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Detailed specifications: OSG60R150JF, OSG60R150KF, OSG60R150PF, OSG60R180DT3F, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF, OSG60R180IF, 13N50, OSG60R180PF, OSG60R190DT3ZF, OSG60R190DTF, OSG60R190FSZF, OSG60R190FT3ZF, OSG60R1K2AF, OSG60R1K2DF, OSG60R1K2FF

Keywords - OSG60R180KF MOSFET specs

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