OSG60R200JSZF Datasheet. Specs and Replacement
Type Designator: OSG60R200JSZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68.2 nS
Cossⓘ -
Output Capacitance: 98.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: PDFN8X8
OSG60R200JSZF substitution
- MOSFET ⓘ Cross-Reference Search
OSG60R200JSZF datasheet
7.1. Size:401K oriental semi
osg60r2k2dsf.pdf 
OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒
7.5. Size:373K oriental semi
osg60r2k8af.pdf
OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
7.6. Size:980K oriental semi
osg60r2k2df.pdf
OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
7.7. Size:393K oriental semi
osg60r2k2fsf.pdf
OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒
7.8. Size:372K oriental semi
osg60r2k8df.pdf
OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
7.10. Size:950K oriental semi
osg60r2k2af.pdf
OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
7.12. Size:374K oriental semi
osg60r2k2asf.pdf
OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒
Detailed specifications: OSG60R1K2DF, OSG60R1K2FF, OSG60R1K2PF, OSG60R1K8AF, OSG60R1K8DF, OSG60R1K8FF, OSG60R1K8PF, OSG60R200FSZF, BS170, OSG60R200PSZF, OSG60R260AF, OSG60R260DF, OSG60R260FF, EMP21N03HC, OSG60R260IF, OSG60R260PF, OSG60R2K2AF
Keywords - OSG60R200JSZF MOSFET specs
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