All MOSFET. OSG60R200JSZF Datasheet

 

OSG60R200JSZF Datasheet and Replacement


   Type Designator: OSG60R200JSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68.2 nS
   Cossⓘ - Output Capacitance: 98.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: PDFN8X8
 

 OSG60R200JSZF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG60R200JSZF Datasheet (PDF)

 ..1. Size:813K  oriental semi
osg60r200jszf.pdf pdf_icon

OSG60R200JSZF

 5.1. Size:948K  oriental semi
osg60r200pszf.pdf pdf_icon

OSG60R200JSZF

 5.2. Size:844K  oriental semi
osg60r200fszf.pdf pdf_icon

OSG60R200JSZF

 7.1. Size:401K  oriental semi
osg60r2k2dsf.pdf pdf_icon

OSG60R200JSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

Datasheet: OSG60R1K2DF , OSG60R1K2FF , OSG60R1K2PF , OSG60R1K8AF , OSG60R1K8DF , OSG60R1K8FF , OSG60R1K8PF , OSG60R200FSZF , 18N50 , OSG60R200PSZF , OSG60R260AF , OSG60R260DF , OSG60R260FF , EMP21N03HC , OSG60R260IF , OSG60R260PF , OSG60R2K2AF .

History: BLS6G2735LS-30 | NCE01NP03S | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - OSG60R200JSZF MOSFET datasheet

 OSG60R200JSZF cross reference
 OSG60R200JSZF equivalent finder
 OSG60R200JSZF lookup
 OSG60R200JSZF substitution
 OSG60R200JSZF replacement

 

 
Back to Top

 


 
.