OSG60R200JSZF
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG60R200JSZF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 151
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 68.2
ns
Cossⓘ - Выходная емкость: 98.6
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2
Ohm
Тип корпуса: PDFN8X8
- подбор MOSFET транзистора по параметрам
OSG60R200JSZF
Datasheet (PDF)
7.1. Size:401K oriental semi
osg60r2k2dsf.pdf 

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
7.5. Size:373K oriental semi
osg60r2k8af.pdf 

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.6. Size:980K oriental semi
osg60r2k2df.pdf 

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.7. Size:393K oriental semi
osg60r2k2fsf.pdf 

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
7.8. Size:372K oriental semi
osg60r2k8df.pdf 

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.10. Size:950K oriental semi
osg60r2k2af.pdf 

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.12. Size:374K oriental semi
osg60r2k2asf.pdf 

OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
Другие MOSFET... FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: IRF241
| NCE70T180D