All MOSFET. EMP21N03HC Datasheet

 

EMP21N03HC Datasheet and Replacement


   Type Designator: EMP21N03HC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: DFN5X6
 

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EMP21N03HC Datasheet (PDF)

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EMP21N03HC

EMP21N03HCNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)2.1mID100AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS

Datasheet: OSG60R1K8FF , OSG60R1K8PF , OSG60R200FSZF , OSG60R200JSZF , OSG60R200PSZF , OSG60R260AF , OSG60R260DF , OSG60R260FF , 75N75 , OSG60R260IF , OSG60R260PF , OSG60R2K2AF , OSG60R2K2ASF , OSG60R2K2DF , OSG60R2K2DSF , OSG60R2K2FSF , OSG60R2K8AF .

History: AP3990R | TPHR9003NL | MDS5651URH | AOD200 | SM6025NSKP | 2SK3985-01 | RU40S4H

Keywords - EMP21N03HC MOSFET datasheet

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