OSG60R260IF Datasheet and Replacement
Type Designator: OSG60R260IF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40.8 nS
Cossⓘ - Output Capacitance: 76.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO262
OSG60R260IF substitution
OSG60R260IF Datasheet (PDF)
Datasheet: OSG60R1K8PF , OSG60R200FSZF , OSG60R200JSZF , OSG60R200PSZF , OSG60R260AF , OSG60R260DF , OSG60R260FF , EMP21N03HC , 13N50 , OSG60R260PF , OSG60R2K2AF , OSG60R2K2ASF , OSG60R2K2DF , OSG60R2K2DSF , OSG60R2K2FSF , OSG60R2K8AF , OSG60R2K8DF .
History: NDP6030 | AP6P025S | DH100P30AI | STD11NM60N-1 | AM7320N | IRF624B | HUFA75345S3ST
Keywords - OSG60R260IF MOSFET datasheet
OSG60R260IF cross reference
OSG60R260IF equivalent finder
OSG60R260IF lookup
OSG60R260IF substitution
OSG60R260IF replacement
History: NDP6030 | AP6P025S | DH100P30AI | STD11NM60N-1 | AM7320N | IRF624B | HUFA75345S3ST



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