OSG60R260IF Datasheet. Specs and Replacement

Type Designator: OSG60R260IF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40.8 nS

Cossⓘ - Output Capacitance: 76.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO262

OSG60R260IF substitution

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OSG60R260IF datasheet

 ..1. Size:1000K  oriental semi
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OSG60R260IF

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 5.1. Size:999K  oriental semi
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OSG60R260IF

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 5.2. Size:997K  oriental semi
 osg60r260df.pdf pdf_icon

OSG60R260IF

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 5.3. Size:998K  oriental semi
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Detailed specifications: OSG60R1K8PF, OSG60R200FSZF, OSG60R200JSZF, OSG60R200PSZF, OSG60R260AF, OSG60R260DF, OSG60R260FF, EMP21N03HC, 5N60, OSG60R260PF, OSG60R2K2AF, OSG60R2K2ASF, OSG60R2K2DF, OSG60R2K2DSF, OSG60R2K2FSF, OSG60R2K8AF, OSG60R2K8DF

Keywords - OSG60R260IF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.