OSG60R2K2FSF Datasheet and Replacement
Type Designator: OSG60R2K2FSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16.8 nS
Cossⓘ - Output Capacitance: 19.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220F
OSG60R2K2FSF substitution
OSG60R2K2FSF Datasheet (PDF)
osg60r2k2fsf.pdf

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
osg60r2k2dsf.pdf

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
osg60r2k2df.pdf

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r2k2af.pdf

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R260FF , EMP21N03HC , OSG60R260IF , OSG60R260PF , OSG60R2K2AF , OSG60R2K2ASF , OSG60R2K2DF , OSG60R2K2DSF , CS150N03A8 , OSG60R2K8AF , OSG60R2K8DF , OSG60R320FT3ZF , OSG60R340DT3F , OSG60R340FT3F , OSG60R360DSF , OSG60R360DZF , OSG60R360FSF .
History: NCE01P30L | 7N65G-TF3-T | IRF3805 | HGI120N10A | IPA60R950C6 | IPU039N03LG | P1504EIS
Keywords - OSG60R2K2FSF MOSFET datasheet
OSG60R2K2FSF cross reference
OSG60R2K2FSF equivalent finder
OSG60R2K2FSF lookup
OSG60R2K2FSF substitution
OSG60R2K2FSF replacement
History: NCE01P30L | 7N65G-TF3-T | IRF3805 | HGI120N10A | IPA60R950C6 | IPU039N03LG | P1504EIS



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