OSG60R2K2FSF datasheet, аналоги, основные параметры

Наименование производителя: OSG60R2K2FSF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 18 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16.8 ns

Cossⓘ - Выходная емкость: 19.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm

Тип корпуса: TO220F

Аналог (замена) для OSG60R2K2FSF

- подборⓘ MOSFET транзистора по параметрам

 

OSG60R2K2FSF даташит

 ..1. Size:393K  oriental semi
 osg60r2k2fsf.pdf pdf_icon

OSG60R2K2FSF

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.1. Size:401K  oriental semi
 osg60r2k2dsf.pdf pdf_icon

OSG60R2K2FSF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.2. Size:980K  oriental semi
 osg60r2k2df.pdf pdf_icon

OSG60R2K2FSF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:950K  oriental semi
 osg60r2k2af.pdf pdf_icon

OSG60R2K2FSF

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OSG60R260FF, EMP21N03HC, OSG60R260IF, OSG60R260PF, OSG60R2K2AF, OSG60R2K2ASF, OSG60R2K2DF, OSG60R2K2DSF, IRF520, OSG60R2K8AF, OSG60R2K8DF, OSG60R320FT3ZF, OSG60R340DT3F, OSG60R340FT3F, OSG60R360DSF, OSG60R360DZF, OSG60R360FSF