OSG60R580DT3F Datasheet. Specs and Replacement

Type Designator: OSG60R580DT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO252

OSG60R580DT3F substitution

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OSG60R580DT3F datasheet

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 4.1. Size:1082K  oriental semi
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 5.1. Size:1016K  oriental semi
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Detailed specifications: OSG60R380AF, OSG60R380DF, OSG60R380DTF, OSG60R380FF, OSG60R380IF, OSG60R380PF, OSG60R580AF, OSG60R580DF, IRF9640, OSG60R580DTF, OSG60R580FF, OSG60R580PF, OSG60R600DMZF, OSG60R670AF, OSG60R670DF, OSG60R670FF, OSG60R670PF

Keywords - OSG60R580DT3F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.