OSG60R900DF Datasheet. Specs and Replacement

Type Designator: OSG60R900DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.4 nS

Cossⓘ - Output Capacitance: 31.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

OSG60R900DF substitution

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OSG60R900DF datasheet

 ..1. Size:1013K  oriental semi
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OSG60R900DF

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 5.1. Size:999K  oriental semi
 osg60r900pf.pdf pdf_icon

OSG60R900DF

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 5.2. Size:1040K  oriental semi
 osg60r900af.pdf pdf_icon

OSG60R900DF

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 5.3. Size:1012K  oriental semi
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Detailed specifications: OSG60R580FF, OSG60R580PF, OSG60R600DMZF, OSG60R670AF, OSG60R670DF, OSG60R670FF, OSG60R670PF, OSG60R900AF, IRFP064N, OSG60R900FF, OSG60R900PF, OSG65R017HT3F, OSG65R020HT3F, OSG65R022H4T3ZF, OSG65R028H4T3ZF, OSG65R028HF, OSG65R028HT3ZF

Keywords - OSG60R900DF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs