OSG65R022H4T3ZF Datasheet. Specs and Replacement

Type Designator: OSG65R022H4T3ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 652 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 124 nS

Cossⓘ - Output Capacitance: 526 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO247-4L

OSG65R022H4T3ZF substitution

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Detailed specifications: OSG60R670FF, OSG60R670PF, OSG60R900AF, OSG60R900DF, OSG60R900FF, OSG60R900PF, OSG65R017HT3F, OSG65R020HT3F, IRF740, OSG65R028H4T3ZF, OSG65R028HF, OSG65R028HT3ZF, OSG65R035HF, OSG65R035HTF, OSG65R035HZF, OSG65R038H4ZF, OSG65R038HTZF

Keywords - OSG65R022H4T3ZF MOSFET specs

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