OSG65R028HF Datasheet. Specs and Replacement

Type Designator: OSG65R028HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 87.3 nS

Cossⓘ - Output Capacitance: 756.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO247

OSG65R028HF substitution

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OSG65R028HF datasheet

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Detailed specifications: OSG60R900AF, OSG60R900DF, OSG60R900FF, OSG60R900PF, OSG65R017HT3F, OSG65R020HT3F, OSG65R022H4T3ZF, OSG65R028H4T3ZF, 20N60, OSG65R028HT3ZF, OSG65R035HF, OSG65R035HTF, OSG65R035HZF, OSG65R038H4ZF, OSG65R038HTZF, OSG65R038HZF, OSG65R040HT3F

Keywords - OSG65R028HF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.