OSG65R069HF Datasheet. Specs and Replacement

Type Designator: OSG65R069HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104.4 nS

Cossⓘ - Output Capacitance: 283.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO247

OSG65R069HF substitution

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OSG65R069HF datasheet

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 4.2. Size:906K  oriental semi
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 4.3. Size:868K  oriental semi
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Detailed specifications: OSG65R038H4ZF, OSG65R038HTZF, OSG65R038HZF, OSG65R040HT3F, OSG65R041HT3ZF, OSG65R041HZF, OSG65R042HF, OSG65R069H4SZF, IRFB4227, OSG65R069HSF, OSG65R069HSZF, OSG65R069HZF, OSG65R070FT3F, OSG65R070HT3F, OSG65R070PT3F, OSG65R074FT3ZF, OSG65R074HT3ZF

Keywords - OSG65R069HF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs