OSG65R069HSF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R069HSF
   Marking Code: OSG65R069HS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 101 nC
   trⓘ - Rise Time: 32.5 nS
   Cossⓘ - Output Capacitance: 296.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO247

OSG65R069HSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search