OSG65R069HSF Datasheet. Specs and Replacement

Type Designator: OSG65R069HSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.5 nS

Cossⓘ - Output Capacitance: 296.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO247

OSG65R069HSF substitution

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OSG65R069HSF datasheet

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Detailed specifications: OSG65R038HTZF, OSG65R038HZF, OSG65R040HT3F, OSG65R041HT3ZF, OSG65R041HZF, OSG65R042HF, OSG65R069H4SZF, OSG65R069HF, IRF3710, OSG65R069HSZF, OSG65R069HZF, OSG65R070FT3F, OSG65R070HT3F, OSG65R070PT3F, OSG65R074FT3ZF, OSG65R074HT3ZF, OSG65R074KT3ZF

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