OSG65R080PT3ZF Datasheet. Specs and Replacement
Type Designator: OSG65R080PT3ZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 379 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 118 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO220
OSG65R080PT3ZF substitution
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OSG65R080PT3ZF datasheet
Detailed specifications: OSG65R070FT3F, OSG65R070HT3F, OSG65R070PT3F, OSG65R074FT3ZF, OSG65R074HT3ZF, OSG65R074KT3ZF, OSG65R080HT3ZF, OSG65R080KT3ZF, AON7408, OSG65R080TT3ZF, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, OSG65R099FZF, OSG65R099H4SZF, OSG65R099HF, OSG65R099HSF
Keywords - OSG65R080PT3ZF MOSFET specs
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OSG65R080PT3ZF replacement
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