FDMS86201 PDF and Equivalents Search

 

FDMS86201 Specs and Replacement

Type Designator: FDMS86201

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: POWER56

FDMS86201 substitution

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FDMS86201 datasheet

 ..1. Size:453K  1
fdms86201.pdf pdf_icon

FDMS86201

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:216K  fairchild semi
fdms86201.pdf pdf_icon

FDMS86201

Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r... See More ⇒

 6.1. Size:519K  1
fdms86200.pdf pdf_icon

FDMS86201

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.2. Size:211K  fairchild semi
fdms86200.pdf pdf_icon

FDMS86201

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance ... See More ⇒

Detailed specifications: STM6610, FDMS86103L, STM6375, FDMS86104, STM4973, FDMS86105, STM4953, FDMS86200, AON7410, FDMS8622, STM4952, FDMS86252, FDMS86300, FDMS86322, FDMS86500L, FDMS86520L, FDMS8848NZ

Keywords - FDMS86201 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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