All MOSFET. FDMS86201 Datasheet

 

FDMS86201 Datasheet and Replacement


   Type Designator: FDMS86201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: POWER56
 

 FDMS86201 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDMS86201 Datasheet (PDF)

 ..1. Size:453K  1
fdms86201.pdf pdf_icon

FDMS86201

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:216K  fairchild semi
fdms86201.pdf pdf_icon

FDMS86201

Preliminary Datasheet April 2010FDMS86201N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 Abeen especially tailored to minimize the on-state r

 6.1. Size:519K  1
fdms86200.pdf pdf_icon

FDMS86201

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:211K  fairchild semi
fdms86200.pdf pdf_icon

FDMS86201

Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance

Datasheet: STM6610 , FDMS86103L , STM6375 , FDMS86104 , STM4973 , FDMS86105 , STM4953 , FDMS86200 , RFP50N06 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ .

History: SVSP20N60FJDD2

Keywords - FDMS86201 MOSFET datasheet

 FDMS86201 cross reference
 FDMS86201 equivalent finder
 FDMS86201 lookup
 FDMS86201 substitution
 FDMS86201 replacement

 

 
Back to Top

 


 
.