Справочник MOSFET. FDMS86201

 

FDMS86201 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS86201
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
   Тип корпуса: POWER56
     - подбор MOSFET транзистора по параметрам

 

FDMS86201 Datasheet (PDF)

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fdms86201.pdfpdf_icon

FDMS86201

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:216K  fairchild semi
fdms86201.pdfpdf_icon

FDMS86201

Preliminary Datasheet April 2010FDMS86201N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 Abeen especially tailored to minimize the on-state r

 6.1. Size:519K  1
fdms86200.pdfpdf_icon

FDMS86201

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:211K  fairchild semi
fdms86200.pdfpdf_icon

FDMS86201

Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance

Другие MOSFET... STM6610 , FDMS86103L , STM6375 , FDMS86104 , STM4973 , FDMS86105 , STM4953 , FDMS86200 , 5N60 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ .

History: AP4N4R2H | YTF840 | BSS138A | STF20NM60D | AONU32320 | 2SJ542

 

 
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