OSG65R140K7SZF Datasheet. Specs and Replacement

Type Designator: OSG65R140K7SZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68.8 nS

Cossⓘ - Output Capacitance: 151 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO263-6L

OSG65R140K7SZF substitution

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OSG65R140K7SZF datasheet

 ..1. Size:862K  oriental semi
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OSG65R140K7SZF

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 4.1. Size:874K  oriental semi
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 5.1. Size:926K  oriental semi
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 5.2. Size:882K  oriental semi
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Detailed specifications: OSG65R125KF, OSG65R125PF, OSG65R125PZF, OSG65R130HT3ZF, OSG65R130PT3ZF, OSG65R140FSZF, OSG65R140H4SZF, OSG65R140HSZF, IRF1407, OSG65R140KSZF, OSG65R140PSZF, OSG65R1K5DZF, OSG65R200FEF, OSG65R200FEF-NB, OSG65R200FF, OSG65R200FSF-NB, OSG65R200FT3F

Keywords - OSG65R140K7SZF MOSFET specs

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