OSG65R200FEF Datasheet. Specs and Replacement

Type Designator: OSG65R200FEF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.8 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220F

OSG65R200FEF substitution

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OSG65R200FEF datasheet

 ..1. Size:903K  oriental semi
 osg65r200fef.pdf pdf_icon

OSG65R200FEF

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 0.1. Size:896K  oriental semi
 osg65r200fef-nb.pdf pdf_icon

OSG65R200FEF

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 4.1. Size:947K  oriental semi
 osg65r200ft3f.pdf pdf_icon

OSG65R200FEF

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 4.2. Size:943K  oriental semi
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OSG65R200FEF

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Detailed specifications: OSG65R130PT3ZF, OSG65R140FSZF, OSG65R140H4SZF, OSG65R140HSZF, OSG65R140K7SZF, OSG65R140KSZF, OSG65R140PSZF, OSG65R1K5DZF, RFP50N06, OSG65R200FEF-NB, OSG65R200FF, OSG65R200FSF-NB, OSG65R200FT3F, OSG65R200HF, OSG65R200JF, OSG65R200JT3F, OSG65R200KF

Keywords - OSG65R200FEF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs