OSG65R220FZF Datasheet and Replacement

   Type Designator: OSG65R220FZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 82.64 nS
   Cossⓘ - Output Capacitance: 0.22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search