OSG65R290FEF-NB MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R290FEF-NB
Marking Code: OSG65R290FE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 74.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220F
OSG65R290FEF-NB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R290FEF-NB Datasheet (PDF)
2.1. Size:991K oriental semi
osg65r290fef osg65r290def osg65r290kef.pdf
osg65r290fef osg65r290def osg65r290kef.pdf
OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: OSG65R600FSF-NB
