OSG65R290FTF Datasheet. Specs and Replacement

Type Designator: OSG65R290FTF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.5 nS

Cossⓘ - Output Capacitance: 64 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220F

OSG65R290FTF substitution

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OSG65R290FTF datasheet

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OSG65R290FTF

OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel... See More ⇒

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Detailed specifications: OSG65R220PZF, OSG65R260DSF, OSG65R260FSF, OSG65R260FSF-NB, OSG65R290AF, OSG65R290DF, OSG65R290FEF-NB, OSG65R290FF, IRF9640, OSG65R290KF, OSG65R290PF, OSG65R2K4AF, OSG65R2K4DF, OSG65R2K4FF, OSG65R2K4PF, OSG65R2KAF, OSG65R2KDF

Keywords - OSG65R290FTF MOSFET specs

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