OSG65R290FTF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R290FTF
   Marking Code: OSG65R290FT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.2 nC
   trⓘ - Rise Time: 24.5 nS
   Cossⓘ - Output Capacitance: 64 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO220F

OSG65R290FTF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG65R290FTF Datasheet (PDF)

..1. Size:959K oriental semi
osg65r290ftf.pdf

4.1. Size:1014K oriental semi
osg65r290ff.pdf

4.2. Size:991K oriental semi
osg65r290fef osg65r290def osg65r290kef.pdf

OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel

4.3. Size:937K oriental semi
osg65r290fef.pdf