OSG65R360GEF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R360GEF
   Marking Code: OSG65R360GE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 83 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 19.7 nC
   Rise Time (tr): 19 nS
   Drain-Source Capacitance (Cd): 57 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
   Package: PDFN5X6

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .