OSG65R360GEF Datasheet. Specs and Replacement

Type Designator: OSG65R360GEF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: PDFN5X6

OSG65R360GEF substitution

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OSG65R360GEF datasheet

 ..1. Size:804K  oriental semi
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 5.2. Size:901K  oriental semi
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 5.3. Size:1032K  oriental semi
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Detailed specifications: OSG65R2KAF, OSG65R2KDF, OSG65R2KFF, OSG65R2KFSF, OSG65R2KPF, OSG65R340DZF, OSG65R340FZF, OSG65R360DEF, IRF740, OSG65R360JEF, OSG65R360PEF, OSG65R380AF, OSG65R380DF, OSG65R380DSF, OSG65R380DTF, OSG65R380FEF-NB, OSG65R380FF

Keywords - OSG65R360GEF MOSFET specs

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