OSG65R380FSF-NB MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R380FSF-NB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25.9 nS
   Cossⓘ - Output Capacitance: 94.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F

OSG65R380FSF-NB Transistor Equivalent Substitute - MOSFET Cross-Reference Search