OSG65R460DZ Datasheet. Specs and Replacement

Type Designator: OSG65R460DZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.8 nS

Cossⓘ - Output Capacitance: 32.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO252

OSG65R460DZ substitution

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OSG65R460DZ datasheet

 0.1. Size:1000K  oriental semi
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OSG65R460DZ

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 5.1. Size:977K  oriental semi
 osg65r460pzf.pdf pdf_icon

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 5.2. Size:1003K  oriental semi
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 5.3. Size:1024K  oriental semi
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Detailed specifications: OSG65R380KSF, OSG65R380PF, OSG65R385DTF, OSG65R420AF, OSG65R420DF, OSG65R420FF, OSG65R420PF, OSG65R460AZF, IRFP250N, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF, OSG65R580AF, OSG65R580DF, OSG65R580DT3F, OSG65R580DTF, OSG65R580FEF

Keywords - OSG65R460DZ MOSFET specs

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