OSG65R580AF Datasheet. Specs and Replacement

Type Designator: OSG65R580AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 38.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO251

OSG65R580AF substitution

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OSG65R580AF datasheet

 ..1. Size:1028K  oriental semi
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OSG65R580AF

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 5.1. Size:919K  oriental semi
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 5.2. Size:1124K  oriental semi
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OSG65R580AF

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 5.3. Size:914K  oriental semi
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Detailed specifications: OSG65R420DF, OSG65R420FF, OSG65R420PF, OSG65R460AZF, OSG65R460DZ, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF, 2SK3878, OSG65R580DF, OSG65R580DT3F, OSG65R580DTF, OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, OSG65R580FT3F

Keywords - OSG65R580AF MOSFET specs

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