OSG65R580DF Datasheet. Specs and Replacement

Type Designator: OSG65R580DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 38.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO252

OSG65R580DF substitution

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OSG65R580DF datasheet

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 4.3. Size:901K  oriental semi
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Detailed specifications: OSG65R420FF, OSG65R420PF, OSG65R460AZF, OSG65R460DZ, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF, OSG65R580AF, STP75NF75, OSG65R580DT3F, OSG65R580DTF, OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, OSG65R580FT3F, OSG65R580FTF

Keywords - OSG65R580DF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.