OSG65R580FEF Datasheet. Specs and Replacement

Type Designator: OSG65R580FEF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 42.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO220F

OSG65R580FEF substitution

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OSG65R580FEF datasheet

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Detailed specifications: OSG65R460DZ, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF, OSG65R580AF, OSG65R580DF, OSG65R580DT3F, OSG65R580DTF, IRF4905, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, OSG65R580FT3F, OSG65R580FTF, OSG65R580IF, OSG65R580KF, OSG65R580KT3F

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