OSG65R580FSF Datasheet. Specs and Replacement
Type Designator: OSG65R580FSF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.8 nS
Cossⓘ - Output Capacitance: 43.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO220F
OSG65R580FSF substitution
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OSG65R580FSF datasheet
Detailed specifications: OSG65R460PZF, OSG65R580AF, OSG65R580DF, OSG65R580DT3F, OSG65R580DTF, OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, K3569, OSG65R580FT3F, OSG65R580FTF, OSG65R580IF, OSG65R580KF, OSG65R580KT3F, OSG65R580PF, OSG65R600DSF, OSG65R600FSF
Keywords - OSG65R580FSF MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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