OSG65R650FZF Datasheet. Specs and Replacement

Type Designator: OSG65R650FZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.9 nS

Cossⓘ - Output Capacitance: 36.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220F

OSG65R650FZF substitution

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OSG65R650FZF datasheet

 ..1. Size:891K  oriental semi
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OSG65R650FZF

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 5.1. Size:859K  oriental semi
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OSG65R650FZF

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 7.1. Size:998K  oriental semi
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OSG65R650FZF

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Detailed specifications: OSG65R580IF, OSG65R580KF, OSG65R580KT3F, OSG65R580PF, OSG65R600DSF, OSG65R600FSF, OSG65R600FSF-NB, OSG65R650DZF, IRFB3607, OSG65R650A, OSG65R650D, OSG65R650F, OSG65R650P, OSG65R760AF, OSG65R760DF, OSG65R760FF, OSG65R760IF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.