OSG65R760IF Datasheet. Specs and Replacement

Type Designator: OSG65R760IF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.4 nS

Cossⓘ - Output Capacitance: 31.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO262

OSG65R760IF substitution

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OSG65R760IF datasheet

 ..1. Size:1043K  oriental semi
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OSG65R760IF

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 5.1. Size:1075K  oriental semi
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 5.2. Size:1103K  oriental semi
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 5.3. Size:1042K  oriental semi
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Detailed specifications: OSG65R650FZF, OSG65R650A, OSG65R650D, OSG65R650F, OSG65R650P, OSG65R760AF, OSG65R760DF, OSG65R760FF, TK10A60D, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, OSG65R900FTF

Keywords - OSG65R760IF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.