OSG65R900DF Datasheet. Specs and Replacement

Type Designator: OSG65R900DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

OSG65R900DF substitution

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OSG65R900DF datasheet

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 4.2. Size:936K  oriental semi
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 5.1. Size:1016K  oriental semi
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Detailed specifications: OSG65R760AF, OSG65R760DF, OSG65R760FF, OSG65R760IF, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, IRF1407, OSG65R900FEF, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF, OSG70R1K4AF, OSG70R1K4DF, OSG70R1K4FF

Keywords - OSG65R900DF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs