OSG65R900FTF Datasheet. Specs and Replacement
Type Designator: OSG65R900FTF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 30.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220F
OSG65R900FTF substitution
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OSG65R900FTF datasheet
Detailed specifications: OSG65R760IF, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, 5N60, OSG65R900GTF, OSG65R900PF, OSG70R1K4AF, OSG70R1K4DF, OSG70R1K4FF, OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF
Keywords - OSG65R900FTF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: JMTK2007A
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