OSG70R2K6AF Datasheet. Specs and Replacement

Type Designator: OSG70R2K6AF

Marking Code: OSG70R2K6A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 7.9 nC

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 12.08 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO251

OSG70R2K6AF substitution

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OSG70R2K6AF datasheet

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Detailed specifications: OSG70R1K4FF, OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF, OSG70R1KPF, OSG70R280KF, OSG70R290DF, 75N75, OSG70R2K6DF, OSG70R2K6FF, OSG70R2K6PF, OSG70R350AF, OSG70R350DF, OSG70R350DTF, OSG70R350FF, OSG70R350KF

Keywords - OSG70R2K6AF MOSFET specs

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