OSG70R2K6AF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG70R2K6AF
   Marking Code: OSG70R2K6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.9 nC
   trⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 12.08 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO251

OSG70R2K6AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search