OSG70R2K6DF Datasheet. Specs and Replacement

Type Designator: OSG70R2K6DF

Marking Code: OSG70R2K6D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 7.9 nC

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 12.08 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO252

OSG70R2K6DF substitution

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OSG70R2K6DF datasheet

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OSG70R2K6DF

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 5.1. Size:1022K  oriental semi
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 5.2. Size:1006K  oriental semi
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 5.3. Size:1038K  oriental semi
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Detailed specifications: OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF, OSG70R1KPF, OSG70R280KF, OSG70R290DF, OSG70R2K6AF, AO3400A, OSG70R2K6FF, OSG70R2K6PF, OSG70R350AF, OSG70R350DF, OSG70R350DTF, OSG70R350FF, OSG70R350KF, OSG70R350PF

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