OSG70R350KF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG70R350KF
   Marking Code: OSG70R350K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.7 nC
   Rise Time (tr): 16.8 nS
   Drain-Source Capacitance (Cd): 63.8 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
   Package: TO263

OSG70R350KF Transistor Equivalent Substitute - MOSFET Cross-Reference Search