OSG80R190PF Datasheet. Specs and Replacement

Type Designator: OSG80R190PF  📄📄 

Marking Code: OSG80R190P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V

Qg ⓘ - Total Gate Charge: 54.7 nC

tr ⓘ - Rise Time: 26.6 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

OSG80R190PF substitution

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OSG80R190PF datasheet

 ..1. Size:972K  oriental semi
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OSG80R190PF

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 5.1. Size:924K  oriental semi
 osg80r190hf.pdf pdf_icon

OSG80R190PF

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 7.1. Size:1077K  oriental semi
 osg80r1k4df.pdf pdf_icon

OSG80R190PF

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 7.2. Size:902K  oriental semi
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Detailed specifications: OSG70R600DSF, OSG70R750AF, OSG70R750FF, OSG70R750PF, OSG70R900DTF, OSG80R069HF, OSG80R140KF, OSG80R190HF, IRFZ44, OSG80R1K4AF, OSG80R1K4FF, OSG80R1K4PF, OSG80R250HF, OSG80R250KF, OSG80R250PF, OSG80R2KFF, OSG80R300FF

Keywords - OSG80R190PF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs