OSG80R650DF Datasheet. Specs and Replacement

Type Designator: OSG80R650DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.4 nS

Cossⓘ - Output Capacitance: 44.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO252

OSG80R650DF substitution

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OSG80R650DF datasheet

 ..1. Size:1034K  oriental semi
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OSG80R650DF

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 5.1. Size:1007K  oriental semi
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OSG80R650DF

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 5.2. Size:1033K  oriental semi
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OSG80R650DF

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 5.3. Size:1033K  oriental semi
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Detailed specifications: OSG80R380DF, OSG80R380DSF, OSG80R380FF, OSG80R380HF, OSG80R380KF, OSG80R380PF, OSG80R600FF, OSG80R650AF, IRF9540, OSG80R650FF, OSG80R650IF, OSG80R650PF, OSG80R900DF, OSG80R900FF, OSG90R1K2AF, OSG90R1K2DF, OSG90R1K2IF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.