OSS60R099HF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSS60R099HF
   Marking Code: OSS60R099H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.6 nC
   trⓘ - Rise Time: 32.3 nS
   Cossⓘ - Output Capacitance: 235.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247

OSS60R099HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search