OSS60R099HF Datasheet. Specs and Replacement

Type Designator: OSS60R099HF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.3 nS

Cossⓘ - Output Capacitance: 235.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247

OSS60R099HF substitution

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OSS60R099HF datasheet

 ..1. Size:848K  oriental semi
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OSS60R099HF

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 5.1. Size:848K  oriental semi
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OSS60R099HF

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 5.2. Size:844K  oriental semi
 oss60r099jf oss60r099tf.pdf pdf_icon

OSS60R099HF

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 5.3. Size:875K  oriental semi
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Detailed specifications: OSG90R380HZF, OSG95R1K2FF, OSG95R1K2PF, OSG95R350HF, OSG95R500FF, OSG95R500HF, OSG95R750DF, OSG95R750FF, IRF530, OSS60R099JF, OSS60R099KF, OSS60R099PF, OSS60R099TF, OSS60R190FF, OSS60R190JF, OSS60R190PF, OSS65R125PZF

Keywords - OSS60R099HF MOSFET specs

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